IXER35N120D1

Continuous Collector Current at 25 C :
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.2 V
Collector- Emitter Voltage VCEO Max : 1200 V
Power Dissipation : 200 W
Package / Case : ISOPLUS 247-3
Gate-Emitter Leakage Current : 200 nA


Features:

• NPT³ IGBT
- low saturation voltage
- positive temperature coefficient for easy paralleling
- fast switching
- short tail current for optimized performance in resonant circuits
• HiPerFREDTM diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
• ISOPLUS 247^TM package
- isolated back surface
- low coupling capacity between pins and heatsink
- high reliability
- industry standard outline




Application

• single switches
• choppers with complementary free wheeling diodes
• phaselegs, H bridges, three phase bridges e.g. for
- power supplies, UPS
- AC, DC and SR drives
- induction heating




Specifications

Symbol	Conditions	Maximum	Ratings
VCES	TVJ = 25°C to 150°C	1200	V
VGES		± 20	V
IC25	TC = 25°C	50	A
IC90	TC = 90°C	32	A
ICM	VGE = ±15 V; RG = 39 Ω; TVJ = 125°C	50	A
VCEK	RBSOA, Clamped inductive load; L = 100 µH	VCES
tSC (SCSOA)	VCE = 900 V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C non-repetitive	10	µs
Ptot	TC = 25°C	200	W

Description

The IXER35N120D1 has some features that:(1)low saturation voltage;(2)positive temperature coefficient for easy paralleling;(3)fast switching;(4)short tail current for optimized performance in resonant circuits;(5)fast reverse recovery;(6)low operating forward voltage;(7)low leakage current;(8)isolated back surface;(9)low coupling capacity between pins and heatsink;(10)high reliability;(11)industry standard outline.

The IXER35N120D1 can be used in single switches;choppers with complementary free wheeling diodes;phaselegs,H bridges,three phase bridges e.g. for power supplies,UPS and AC,DC and SR drives;induction heating.And the absolute maximum ratings of the IXER35N120D1 can be summarized as:(1)Vces: 1200 V;(2)Vges:±20 V;(3)Ic25:50 A;(4)Ic90:32 A;(5)Icm:50 A;(6)Vcek:Vces;(7)tSC:10 s;(8)Ptot(TC=25°C):200 W;(9)RthJH:1.2 K/W;(10)RthJC:0.6 K/W;(11)Iges(VCE=0 V;VGE=±20 V):200 nA.If you want to know more information about this part,please download the datasheet in www.seekdatasheet.com .

Parameters:

Technical/Catalog Information	IXER35N120D1
Vendor	IXYS
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	50A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 35A
Power - Max	200W
Mounting Type	Through Hole
Package / Case	ISOPLUS247?
Packaging	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXER35N120D1 IXER35N120D1