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IXFA4N100Q

MOSFET 4 Amps 1000V 2.8 Rds

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SeekIC No. : 00151209 Detail

IXFA4N100Q: MOSFET 4 Amps 1000V 2.8 Rds

IXFA4N100Q Data Sheet

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Part Number:
IXFA4N100Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-263
Continuous Drain Current : 4 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 3 Ohms


Features:

• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• International standard packages
• Low RDS (on)
• Rated for unclamped Inductive load
Switching (UIS)
• Molding epoxies meet UL94V-0
flammability classification


Specifications

</table
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25 to 150
TJ = 25 to 150; RGS = 1 M
1000
1000
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25
TC = 25, pulse width limited by TJM
TC = 25
4
16
4
A
A
A
EAR
EAS

TC = 25
20
700
mJ
mJ
dv/dt
IS IDM, di/dt 100 A/s, VDD VDSS,
TJ150, RG = 2
5
V/ns
PD
TC = 25
150
W
TJ
TJM
Tstg
-55 to +150
150
-55 to +150


TL
1.6 mm (0.063 in) from case for 10 s
300
Md
Mounting torque (TO-220)
1.13/10
Nm/lb.in.
Weight
TO-220
TO-263
4
2
g
g



Parameters:

Technical/Catalog InformationIXFA4N100Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C4A
Rds On (Max) @ Id, Vgs3 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 1050pF @ 25V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs39nC @ 10V
Package / CaseD&sup2;Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFA4N100Q
IXFA4N100Q



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