IXFE44N60

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.13 Ohms
Configuration : Single Dual Source
Continuous Drain Current : 41 A
Package / Case : ISOPLUS 227


Features:

•Conforms to SOT-227B outline
•Low R_{DS (on)} HDMOS^TM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS) rated
•Low package inductance
•Fast intrinsic Rectifier


Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls


Specifications

Symbol	Test Conditions	Maximum	Ratings
VDSS VDGR	TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M	600 600	V V
VGS VGSM	Continuous Transient	±20 ±30	V V
ID25 IDM IAR	TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C	41 176 44	A A A
EAR EAS	TC = 25°C TC = 25°C	60mJ 3J	mJ J
dv/dt	IS IDM, di/dt 100 A/s, VDD VDSS TJ 150°C, RG = 2	5	V/ns
PD	TC = 25°C	500	W
TJ TJM Tstg		-55 ... +150 150 -55 ... +150	°C °C °C
TL	1.6 mm (0.062 in.) from case for 10 s	-	°C
VISOL	50/60 Hz, RMS t = 1 min IISOL 1 mA t = 1 s	2500 3000	V~ V~
Md	Mounting torque Terminal connection torque	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.
Weight		30	g g

Parameters:

Technical/Catalog Information	IXFE44N60
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	41A
Rds On (Max) @ Id, Vgs	130 mOhm @ 22A, 10V
Input Capacitance (Ciss) @ Vds	8900pF @ 25V
Power - Max	500W
Packaging	Tube
Gate Charge (Qg) @ Vgs	330nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFE44N60 IXFE44N60