IXFE180N10

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single Dual Source
Resistance Drain-Source RDS (on) : 0.008 Ohms
Continuous Drain Current : 176 A
Package / Case : ISOPLUS 227


Features:

•Conforms to SOT-227B outline
•Encapsulating epoxy meets UL 94 V-0, flammability classification
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS) rated
•Low package inductance
•Fast intrinsic Rectifier


Application

• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays


Specifications

Symbol		Test Conditions	Maximum	Ratings
VCES VCGR		TJ = 25to 150 TJ = 25 to 150; RGE = 1 M	100 100	V V
VGES VGEM		Continuous Transient	±30 ±40	V V
IC25 IL(RMS) IDM IAR		TC = 25 Terminal (current limit) TC = 25 Note 1 TC = 25	178 100 750 180	A A A A
EAR EAS		TC = 25 TC = 25	60 3	mJ J
dv/dt		I IDM, di/dt 100 A/s, V VDSS, TJ 150, RG =2	10	V/ns
PD		TC = 25	500	W
TJ TJM Tstg			-55 ... +150 150 -55 ... +150
TL		1.6 mm (0.062 in.) from case for 10 s	300
VISOL		50/60 Hz, RMS, 1 minute IISOL < 1 mA, 10 seconds	2500 3000	V~ V~
Md		Mounting torque Terminal connection torque	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.
Weight			19	g

Parameters:

Technical/Catalog Information	IXFE180N10
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	176A
Rds On (Max) @ Id, Vgs	8 mOhm @ 90A, 10V
Input Capacitance (Ciss) @ Vds	9100pF @ 25V
Power - Max	500W
Packaging	Tube
Gate Charge (Qg) @ Vgs	360nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFE180N10 IXFE180N10