MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
IXFH12N90P: MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
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Features: ·International standard packages·Unclamped Inductive Switching (UIS) rated· Low package ...
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
Features: • International standard packages• Low RDS (on) HDMOSTM process• Rugge...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 900 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 12 A | ||
| Resistance Drain-Source RDS (on) : | 900 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-247 | Packaging : | Tube |