IXFH15N100 Selling Leads, Price trend , Ixys, IXFH15N100 DataSheet download, circuit diagram from SeekIC.com

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IXFH15N100: MOSFET 15 Amps 1000V 0.7 Rds

IXFH15N100 Data Sheet

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Part Number:: IXFH15N100
Mfg:: Ixys
Supply Ability:: 5000

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1~5000

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Upload time: 2024/4/26

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Recent History
What is this?

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	1000 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	15 A
Resistance Drain-Source RDS (on) :	0.7 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-247AD	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 15 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 0.7 Ohms
Package / Case : TO-247AD

Features:

International standard packages
Low R_{DS (on)} HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS) rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier

Application

DC-DC converters
Battery chargers
Switched-mode and resonant-mode power supplies
DC choppers
AC motor control
Temperature and lighting controls

Parameters:

Technical/Catalog Information	IXFH15N100
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	700 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	4500pF @ 25V
Power - Max	360W
Packaging	Tube
Gate Charge (Qg) @ Vgs	220nC @ 10V
Package / Case	TO-247AD
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFH15N100 IXFH15N100

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IXFH15N100

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