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IXFH15N100Q

MOSFET 15 Amps 1000V 0.725 Rds

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SeekIC No. : 00158395 Detail

IXFH15N100Q: MOSFET 15 Amps 1000V 0.725 Rds

IXFH15N100Q Data Sheet

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Part Number:
IXFH15N100Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.7 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 15 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 0.7 Ohms
Package / Case : TO-247AD


Features:

·IXYS advanced low Qg process
·International standard packages
·Epoxy meet UL 94 V-0, flammability classification
·Low RDS (on) low Qg
·Avalanche energy and current rated
·Fast intrinsic rectifier


Application

·Easy to mount
·Space savings
·High power density



Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C RGS=1M		 1000
1000		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30
 V
V
ID25
IDM
IAR
 TC = 25°C
TC = 25°C pulse width limited by TJM
TC = 25°C

15
60
15		 A
A
A
A


EAR
EAS
 TC = 25°C
 45
1.5
 0mJ
mJ
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2		 5 V/ns
PD TC = 25°C 360 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md
 Mounting torque TO-247
TO-264
 1.13/10
0.9/6
 Nm/lb.in.
Nm/lb.in.
Weight TO-247
TO-268
TO-264		 6
4
10		 g
g
g



Parameters:

Technical/Catalog InformationIXFH15N100Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs700 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4500pF @ 25V
Power - Max360W
PackagingTube
Gate Charge (Qg) @ Vgs170nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH15N100Q
IXFH15N100Q



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