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IXFH40N30Q

MOSFET 300V 40A

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SeekIC No. : 00158254 Detail

IXFH40N30Q: MOSFET 300V 40A

IXFH40N30Q Data Sheet

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Part Number:
IXFH40N30Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 300 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 0.08 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247AD Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 0.08 Ohms
Drain-Source Breakdown Voltage : 300 V
Package / Case : TO-247AD


Features:

• IXYS advanced low Qg process
• International standard packages
• Low gate charge and capacitance - easier to drive - faster switching
• Low RDS (on)
• Unclamped Inductive Switching (UIS) rated
• Molding epoxies meet UL94V-0 flammability classification


Specifications

VDSS
 TJ = 25°C to 150°C
300
V
VDGR
 TJ = 25°C to 150°C; RGS = 1 M
300
V
VGS
 Continuous
±20
V
VGSM
 Transient ±30
V
ID25
 TC = 25°C
40
A
IDM
 TC = 25°C, 160
A
 pulse width limited by TJM 40
A
IAR
 TC = 25°C 30
A
EAR
 TC = 25°C
1.0
mJ
dv/dt
 IS IDM, di/dt 100 A/s, VDD VDSS,
TJ 150°C, RG = 2
5
V/ns
PD
 TC = 25°C
300
W
TJ
 -55 ... +150
°C
TJM
 150
°C
Tstg
 -55 ... +150
°C
TL
 1.6 mm (0.063 in) from case for 10 s 300
°C
Md
 Mounting torque
0.9/6
 1.13/10
Nm/lb.in
Weight TO-247 4
g
 TO-268

6
g



Parameters:

Technical/Catalog InformationIXFH40N30Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C40A
Rds On (Max) @ Id, Vgs80 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 3100pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs140nC @ 10V
Package / CaseTO-247AD
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFH40N30Q
IXFH40N30Q



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