Position: Home  > All Categories> Integrated Circuits (ICs) > IXFJ13N50

IXFJ13N50

MOSFET 13 Amps 500V 0.4 Rds

product image

IXFJ13N50 Picture
See larger image
SeekIC No. : 00164379 Detail

IXFJ13N50: MOSFET 13 Amps 500V 0.4 Rds

IXFJ13N50 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IXFJ13N50
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/5

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-268 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 0.4 Ohms
Package / Case : TO-268


Features:

• Low profile, high power package
• Long creep and strike distances
• Easy up-grade path for TO-220 designs
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
   - easy to drive and to protect
• Fast intrinsic Rectifier


Application

• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays


Specifications

Symbol Test Conditions
Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
500
500
V
V
VGS
VGEM		 Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR		 TC = 25°C
TC = 25°C
TC = 25°C
13
52
13
A
mJ
J
EAR TC = 25°C
18
mJ
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2Ω
5
V/ns
PD TC = 25°C
180
W

TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s
300

°C

Weight

5
g



Parameters:

Technical/Catalog InformationIXFJ13N50
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C13A
Rds On (Max) @ Id, Vgs400 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 2800pF @ 25V
Power - Max180W
PackagingTube
Gate Charge (Qg) @ Vgs120nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFJ13N50
IXFJ13N50



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Crystals and Oscillators
WT325BI0030.000000
2SB49
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Isolators
HCPL062N
HCPL316J
Tapes, Adhesives
803
AC452-2
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Optical Inspection Equipment
AA924
A21K4B
View more