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IXFJ32N50Q

MOSFET 32 Amps 500V 0.15 Rds

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SeekIC No. : 00164386 Detail

IXFJ32N50Q: MOSFET 32 Amps 500V 0.15 Rds

IXFJ32N50Q Data Sheet

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Part Number:
IXFJ32N50Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 0.15 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-268 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 32 A
Resistance Drain-Source RDS (on) : 0.15 Ohms
Package / Case : TO-268


Features:

• Low profile, high power package
• Long creep and strike distances
• Easy up-grade path for TO-220 designs
• Low RDS (on) low Qg process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
   - easy to drive and to protect
• Fast intrinsic Rectifier


Application

• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays


Specifications

Symbol Test Conditions
Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
500
500
                 V
V
VGS
VGEM		 Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR		 TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
32
128
32
A
mJ
J
EAs TC = 25°C
1.5
J
EAR TC = 25°C
45
mJ
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2Ω
5
V/ns
PD TC = 25°C
360
W

TJ
TJM
Tstg
-55 ... +150
             150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s
300

°C




Parameters:

Technical/Catalog InformationIXFJ32N50Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C32A
Rds On (Max) @ Id, Vgs150 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 3950pF @ 25V
Power - Max360W
PackagingTube
Gate Charge (Qg) @ Vgs153nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFJ32N50Q
IXFJ32N50Q



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