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IXFK150N15P: MOSFET 170 Amps 150V 0.013 Rds

IXFK150N15P Data Sheet

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Part Number:: IXFK150N15P
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	150 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	150 A
Resistance Drain-Source RDS (on) :	0.013 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	TO-264	Packaging :	Box

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 150 V
Resistance Drain-Source RDS (on) : 0.013 Ohms
Package / Case : TO-264
Continuous Drain Current : 150 A
Packaging : Box

Parameters:

Technical/Catalog Information	IXFK150N15P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	150A
Rds On (Max) @ Id, Vgs	13 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	5800pF @ 25V
Power - Max	714W
Packaging	Tube
Gate Charge (Qg) @ Vgs	190nC @ 10V
Package / Case	TO-264
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFK150N15P IXFK150N15P

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IXFK150N15P

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