MOSFET 170 Amps 150V 0.013 Rds
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Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate...
Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
Features: • International standard packages• JEDECTO-264 AA,epoxymeet UL 94 V-0, flamm...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 150 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 150 A | ||
| Resistance Drain-Source RDS (on) : | 0.013 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-264 | Packaging : | Box |
| Technical/Catalog Information | IXFK150N15P |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 150A |
| Rds On (Max) @ Id, Vgs | 13 mOhm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 5800pF @ 25V |
| Power - Max | 714W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 190nC @ 10V |
| Package / Case | TO-264 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXFK150N15P IXFK150N15P |