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IXFK35N50

MOSFET 35 Amps 500V 0.15 Rds

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SeekIC No. : 00159103 Detail

IXFK35N50: MOSFET 35 Amps 500V 0.15 Rds

IXFK35N50 Data Sheet

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Part Number:
IXFK35N50
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 35 A
Resistance Drain-Source RDS (on) : 0.15 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 35 A
Resistance Drain-Source RDS (on) : 0.15 Ohms
Package / Case : TO-264AA


Features:

· International standard packages
· Molding epoxies meet UL 94 V-0 flammability classification
· Low RDS (on) HDMOSTM process
· Unclamped Inductive Switching (UIS) rated
· Fast intrinsic rectifier


Application

· DC-DC converters
· Synchronous rectification
· Battery chargers
· Switched-mode and resonant-mode power supplies
· DC choppers
· Temperature and lighting controls


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M		 500
500		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30
 V
V
ID25
IDM
IAR
 TC = 25°C
TC = 25°C
pulse width limited by TJM
TC = 25°C
 33N50 33
35N50 35
33N50 132
35N50 140
33N50 30
35N50 35		 A
A
A
A
A
A


EAR
EAS
 ID = 32 A
TC = 25°C		 2.5
45
mJ
J
dv/dt IS IDM, di/dt 100 A/s, VDD VDSS
TJ 150°C, RG = 2 		5 V/ns
PD TC = 25°C 416 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md
 Mounting torque TO-264
 0.9/6
 Nm/lb.in.
Weight   10 g




Parameters:

Technical/Catalog InformationIXFK35N50
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C35A
Rds On (Max) @ Id, Vgs150 mOhm @ 16.5A, 10V
Input Capacitance (Ciss) @ Vds 5700pF @ 25V
Power - Max416W
PackagingTube
Gate Charge (Qg) @ Vgs227nC @ 10V
Package / CaseTO-264AA
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFK35N50
IXFK35N50



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