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IXFK90N30

MOSFET 90 Amps 300V 0.033 Rds

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SeekIC No. : 00158406 Detail

IXFK90N30: MOSFET 90 Amps 300V 0.033 Rds

IXFK90N30 Data Sheet

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Part Number:
IXFK90N30
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 300 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 90 A
Resistance Drain-Source RDS (on) : 0.033 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-264AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Continuous Drain Current : 90 A
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.033 Ohms
Drain-Source Breakdown Voltage : 300 V
Package / Case : TO-264AA


Features:

 International standard packages
 Low RDS (on) HDMOSTM process
 Rugged polysilicon gate cell structure
 Unclamped Inductive Switching (UIS) rated
 Low package inductance
   - easy to drive and to protect
 Fast intrinsic rectifier


Application

 DC-DC converters
 Battery chargers
 Switched-mode and resonant-mode power supplies
 DC choppers
 AC motor control
 Temperature and lighting controls


Specifications

Symbol Test Conditions
Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
300
300
 V       V
VGS
VGEM		 Continuous
Transient
±20
±30
V
V
ID25
ID104
IDM
IAR		 TC = 25oC, Chip capability
TC = 80oC, limited by external leads
TC = 25oC, pulse width limited by TJM
TC = 25°C
90
75
360
90
A
A
A
A
EAR
EAS		 TC = 25°C
TC = 25°C

64
3

mJ
J


dv/dt
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2 Ω

5

V/ns

PD TC = 25°C
560
W

TJ
TJM
Tstg
TL

 1.6 mm (0.063 in.) from case for 10 s
-55 ... +150
150
-55 ... +150
300
°C
°C
°C
°C
Md Mounting torque
0.4/6
Nm/lb.in.
.
Weight

PLUS 247
TO-264
6
10
g
g



Parameters:

Technical/Catalog InformationIXFK90N30
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C90A
Rds On (Max) @ Id, Vgs33 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 10000pF @ 25V
Power - Max560W
PackagingTube
Gate Charge (Qg) @ Vgs360nC @ 10V
Package / CaseTO-264AA
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFK90N30
IXFK90N30



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