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IXFL30N120P

MOSFET 30 Amps 1200V 0.35 Rds

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SeekIC No. : 00158311 Detail

IXFL30N120P: MOSFET 30 Amps 1200V 0.35 Rds

IXFL30N120P Data Sheet

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Part Number:
IXFL30N120P
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 18 A
Resistance Drain-Source RDS (on) : 0.38 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS i5-Pak Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 18 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 1200 V
Resistance Drain-Source RDS (on) : 0.38 Ohms
Package / Case : ISOPLUS i5-Pak


Parameters:

Technical/Catalog InformationIXFL30N120P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C18A
Rds On (Max) @ Id, Vgs380 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 19000pF @ 25V
Power - Max357W
PackagingTube
Gate Charge (Qg) @ Vgs310nC @ 10V
Package / CaseISOPLUSi5-Pak?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFL30N120P
IXFL30N120P



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