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IXFL34N100

MOSFET 34 Amps 1000V 0.28W Rds

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SeekIC No. : 00159184 Detail

IXFL34N100: MOSFET 34 Amps 1000V 0.28W Rds

IXFL34N100 Data Sheet

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Part Number:
IXFL34N100
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 264 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.3 Ohms
Drain-Source Breakdown Voltage : 1000 V
Package / Case : ISOPLUS 264


Features:

·Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
·Low drain to tab capacitance(<30pF)
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Fast intrinsic Rectifier


Application

·DC-DC converters
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·AC motor control


Parameters:

Technical/Catalog InformationIXFL34N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs280 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 9200pF @ 25V
Power - Max550W
PackagingTube
Gate Charge (Qg) @ Vgs380nC @ 10V
Package / CaseISOPLUS264?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFL34N100
IXFL34N100



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