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IXFL38N100Q2

MOSFET Q2-Class HiperFET 1000, 22A

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SeekIC No. : 00158225 Detail

IXFL38N100Q2: MOSFET Q2-Class HiperFET 1000, 22A

IXFL38N100Q2 Data Sheet

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Part Number:
IXFL38N100Q2
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 22 A
Resistance Drain-Source RDS (on) : 0.28 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 264 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 22 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 0.28 Ohms
Package / Case : ISOPLUS 264


Parameters:

Technical/Catalog InformationIXFL38N100Q2
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C29A
Rds On (Max) @ Id, Vgs280 mOhm @ 19A, 10V
Input Capacitance (Ciss) @ Vds 13500pF @ 25V
Power - Max380W
PackagingTube
Gate Charge (Qg) @ Vgs250nC @ 10V
Package / CaseISOPLUS264?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFL38N100Q2
IXFL38N100Q2



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