IXFN100N25

MOSFET 100 Amps 250V 0.027 Rds

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IXFN100N25 Picture
SeekIC No. : 00159172 Detail

IXFN100N25: MOSFET 100 Amps 250V 0.027 Rds

floor Price/Ceiling Price

Part Number:
IXFN100N25
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 0.027 Ohms Configuration : Single Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-227B Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 100 A
Drain-Source Breakdown Voltage : 250 V
Configuration : Single Dual Source
Package / Case : SOT-227B
Resistance Drain-Source RDS (on) : 0.027 Ohms


Parameters:

Technical/Catalog InformationIXFN100N25
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs27 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 9100pF @ 25V
Power - Max600W
PackagingTube
Gate Charge (Qg) @ Vgs300nC @ 10V
Package / CaseSOT-227B miniBLOC
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFN100N25
IXFN100N25



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