Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Mounting Style
: SMD/SMT
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Drain-Source Breakdown Voltage
: 500 V
Continuous Drain Current
: 48 A
Configuration
: Single Dual Source
Package / Case
: SOT-227B
Resistance Drain-Source RDS (on)
: 0.1 Ohms
DescriptionIXFN48N50 is a kind of N-channel enhancement mode.
There is some information about the maximum ratings of IXFN48N50. The VDSS is 500 V at TJ=25 to 150. The VDDR is 500 V at TJ=25 to 150, RGS=1 M. The continuous VGS is ±20 V. The transient VGSM is ±30 V. The ID25 is 44 A at TC=25. The IDM is 176 A at TC=25, pulse width limited by TJM. The IAR is 24 A at TC=25. The EAR is 30 mJ at TC=25. The PD is 520 W at TC=25. The TJ is from -55 to +150. The TJM is 150. The Tstg is from -55 to +150. The TL is 300 when 1.6 mm (0.063 in) from case for 10 s.
The following is about the characteristics of IXFN48N50. The minimum VDSS is 500 V at VGS=0 V, ID=1 mA. The minimum VGS(th) is 2 V and the maximum is 4 V at VDS=VGS, ID=8 mA. The maximum IGSS is ±200 nA when VGS=±20 VDC, VDS=0. The maximum IDSS is 400 A at VDS=0.8 • VDSS, TJ=25 and 2 mA at VGS=0 V, TJ=125. The maximum RDS(on) is 0.12 when VGS=10 V, I =0.5 • ID25 and pulse test, t 300 s, duty cycle d 2 %.
Parameters: | Technical/Catalog Information | IXFN48N50 |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Chassis Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 48A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 8400pF @ 25V |
| Power - Max | 520W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 270nC @ 10V |
| Package / Case | SOT-227B miniBLOC |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXFN48N50
IXFN48N50
|
IXFN48N50 Data Sheet
