IXFN64N50P

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Configuration : Single Dual Source
Continuous Drain Current : 61 A
Resistance Drain-Source RDS (on) : 0.085 Ohms
Package / Case : SOT-227B


Features:

 International standard packages
 Fast recovery diode
 Unclamped Inductive Switching (UIS) rated
 Low package inductance
   - easy to drive and to protect


Application

 Easy to mount
 Space savings
 High power density


Specifications

Symbol	Test Conditions	Maximum Ratings
VDSS VDGR	TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M	500 500	V V
VGS VGEM	Continuous Transient	±30 ±40	V V
ID25 IDM	TC = 25°C TC = 25°C, pulse width limited by TJM	64 150	A A
IAR EAR EAS	TC = 25°C TC = 25°C TC = 25°C	64 70 2.0	A mJ J
dv/dt	IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 4 Ω	20	V/ns
PD	TC = 25°C	700	W
TJ TJM Tstg		-55 ... +150              150 -55 ... +150	°C °C °C
Md	Mounting torque	1.13/10 Nm/lb.in.
VISOL	50/60 Hz                t = 1 min IISOL 1 mA          t= 1 s	2500 3000	V~ V~
Md	Mounting torque Terminal connection torque (M4)	1.5/13 1.5/13	Nm/lb.in. Nm/lb.in.. .
Weight	SOT-227B	30	g

Parameters:

Technical/Catalog Information	IXFN64N50P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	61A
Rds On (Max) @ Id, Vgs	85 mOhm @ 32A, 10V
Input Capacitance (Ciss) @ Vds	8700pF @ 25V
Power - Max	700W
Packaging	Tube
Gate Charge (Qg) @ Vgs	150nC @ 10V
Package / Case	SOT-227B miniBLOC
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFN64N50P IXFN64N50P