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IXFP3N120

MOSFET 3 Amps 1200V 4.50 Rds

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SeekIC No. : 00154436 Detail

IXFP3N120: MOSFET 3 Amps 1200V 4.50 Rds

IXFP3N120 Data Sheet

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Part Number:
IXFP3N120
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 4.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 1200 V
Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 4.5 Ohms


Features:

·Low gate charge and capacitances
    - easier to drive
    - faster switching
·International standard packages
·Low RDS (on)
·Rated for unclamped Inductive load Switching (UIS)
·Molding epoxies meet UL 94 V-0 flammability classification




Specifications

Symbol Test Conditions

Maximum

Ratings

VDSS
VDGR		 TJ = 25 to 150
TJ = 25 to 150; RGS = 1 MΩ

1200
1200

V
V

VGS
VGSM		 Continuous
Transient

±20
±30

V
V

ID25
IDM
IAR		 TC = 25
TC = 25, pulse width limited by TJM
TC = 25

3
12
3

A
A
A

EAR
EAS		 TC = 25

20
700

mJ
mJ

dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150, RG = 4.7 Ω

10

V/ns

PD TC = 25

200

W

TJ
TJM
Tstg

-55 to +150
150
-55 to +150



TL 1.6 mm (0.063 in) from case for 10 s

300

Md Mounting torque (TO-220)

1.13/10

Nm/lb.in.

Weight TO-220
TO-263

4
2

g
g





Parameters:

Technical/Catalog InformationIXFP3N120
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs4.5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 1050pF @ 25V
Power - Max200W
PackagingTube
Gate Charge (Qg) @ Vgs39nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFP3N120
IXFP3N120



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