Position: Home  > All Categories> Integrated Circuits (ICs) > IXFP3N120

IXFP3N120

MOSFET 3 Amps 1200V 4.50 Rds

product image

IXFP3N120 Picture
See larger image
SeekIC No. : 00154436 Detail

IXFP3N120: MOSFET 3 Amps 1200V 4.50 Rds

IXFP3N120 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IXFP3N120
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/5

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 4.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 1200 V
Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 4.5 Ohms


Features:

·Low gate charge and capacitances
    - easier to drive
    - faster switching
·International standard packages
·Low RDS (on)
·Rated for unclamped Inductive load Switching (UIS)
·Molding epoxies meet UL 94 V-0 flammability classification




Specifications

Symbol Test Conditions

Maximum

Ratings

VDSS
VDGR		 TJ = 25 to 150
TJ = 25 to 150; RGS = 1 MΩ

1200
1200

V
V

VGS
VGSM		 Continuous
Transient

±20
±30

V
V

ID25
IDM
IAR		 TC = 25
TC = 25, pulse width limited by TJM
TC = 25

3
12
3

A
A
A

EAR
EAS		 TC = 25

20
700

mJ
mJ

dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150, RG = 4.7 Ω

10

V/ns

PD TC = 25

200

W

TJ
TJM
Tstg

-55 to +150
150
-55 to +150



TL 1.6 mm (0.063 in) from case for 10 s

300

Md Mounting torque (TO-220)

1.13/10

Nm/lb.in.

Weight TO-220
TO-263

4
2

g
g





Parameters:

Technical/Catalog InformationIXFP3N120
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs4.5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 1050pF @ 25V
Power - Max200W
PackagingTube
Gate Charge (Qg) @ Vgs39nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFP3N120
IXFP3N120



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Integrated Circuits (ICs)
TA8435H
1MB12-140
LED Products
LM24P20
KCG057QV1DB-G770
Transformers
TM-09210
BV222-1-00992
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Filters
PICO2205A
PICO2204A
View more