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IXFP3N80

MOSFET 3.6 Amps 800V 3.6 Rds

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SeekIC No. : 00154406 Detail

IXFP3N80: MOSFET 3.6 Amps 800V 3.6 Rds

IXFP3N80 Data Sheet

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Part Number:
IXFP3N80
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.6 A
Resistance Drain-Source RDS (on) : 3.6 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 3.6 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 3.6 Ohms


Parameters:

Technical/Catalog InformationIXFP3N80
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C3.6A
Rds On (Max) @ Id, Vgs3.6 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 685pF @ 25V
Power - Max100W
PackagingTube
Gate Charge (Qg) @ Vgs24nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFP3N80
IXFP3N80



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