Position: Home  > All Categories> Integrated Circuits (ICs) > IXFR100N25

IXFR100N25

MOSFET 87 Amps 250V 0.027 Rds

product image

IXFR100N25 Picture
See larger image
SeekIC No. : 00159290 Detail

IXFR100N25: MOSFET 87 Amps 250V 0.027 Rds

IXFR100N25 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IXFR100N25
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/29

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 87 A
Resistance Drain-Source RDS (on) : 0.027 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Continuous Drain Current : 87 A
Package / Case : ISOPLUS 247
Resistance Drain-Source RDS (on) : 0.027 Ohms


Features:

 Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
 Low drain to tab capacitance(<30pF)
 Low RDS (on) HDMOSTM process
 Rugged polysilicon gate cell structure
 Rated for Unclamped Inductive Load Switching (UIS)
 Fast intrinsic Rectifier


Application

 DC-DC converters
 Battery chargers
 Switched-mode and resonant-mode power supplies
 DC choppers
 AC motor control


Specifications

Symbol Test Conditions
Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
250
250
V
V
VGS
VGEM		 Continuous
Transient
±20
±30
V
V
ID25
IL(RMS)
IDM
IAR
TC = 25°C (MOSFET chip capability)
TC = External lead current limit
TC = 25°C, Note 1
TC= 25°C
87
75
400
100
A
A
A
A
EAR
EAS		 TC = 25°C
TC = 25°C
64
3
mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2Ω
5
V/ns
PD TC = 25°C
400
W

TJ
TJM
Tstg

  
-55 ... +150
             150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.063 in.) from case for 10 s
300

°C

VISOL 50/60 Hz, RMS            t = 1 min
2500
V~
Weight  
30
g



Parameters:

Technical/Catalog InformationIXFR100N25
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C87A
Rds On (Max) @ Id, Vgs27 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 9100pF @ 25V
Power - Max400W
PackagingTube
Gate Charge (Qg) @ Vgs300nC @ 10V
Package / CaseISOPLUS247?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFR100N25
IXFR100N25



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Prototyping Products
AVT4168
DE1
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
View more