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IXFR120N20

MOSFET 200V 105A

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SeekIC No. : 00159078 Detail

IXFR120N20: MOSFET 200V 105A

IXFR120N20 Data Sheet

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Part Number:
IXFR120N20
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 105 A
Resistance Drain-Source RDS (on) : 0.017 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 105 A
Resistance Drain-Source RDS (on) : 0.017 Ohms
Package / Case : ISOPLUS 247


Features:

• Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
• Low drain to tab capacitance(<25pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Fast intrinsic Rectifier


Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control


Specifications

Symbol Test Conditions
Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
200
200
V
V
VGS
VGEM		 Continuous
Transient
±20
±30
V
V
ID25
ID(RMS)
IDM
IAR
TC = 25°C (MOSFET chip capability)
External lead (current limit)
TC = 25°C, Note 1
TC = 25°C
105
76
480
120
A
A
A
A

EAR
EAS
TC = 25°CTC = 25°C
60
3

mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
5
V/ns
PD TC = 25°C
250
W

TJ
TJM
Tstg

  
-55 ... +150
             150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.063 in.) from case for 10 s
300

°C

VISOL 50/60 Hz, RMS t = 1 min
2500
V~
Weight  

5

g



Parameters:

Technical/Catalog InformationIXFR120N20
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C105A
Rds On (Max) @ Id, Vgs17 mOhm @ 60A, 10V
Input Capacitance (Ciss) @ Vds 9100pF @ 25V
Power - Max400W
PackagingTube
Gate Charge (Qg) @ Vgs360nC @ 10V
Package / CaseISOPLUS247?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFR120N20
IXFR120N20



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