Position: Home  > All Categories> Integrated Circuits (ICs) > IXFR12N100Q

IXFR12N100Q

MOSFET 12 Amps 1000V 1 Rds

product image

IXFR12N100Q Picture
See larger image
SeekIC No. : 00159255 Detail

IXFR12N100Q: MOSFET 12 Amps 1000V 1 Rds

IXFR12N100Q Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IXFR12N100Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/5

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 1.1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 10 A
Drain-Source Breakdown Voltage : 1000 V
Package / Case : ISOPLUS 247
Resistance Drain-Source RDS (on) : 1.1 Ohms


Features:

• Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
• Low drain to tab capacitance(<50pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Fast intrinsic Rectifier


Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control


Specifications

Symbol Test Conditions
Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M		  
1000
1000
V
V
VGS
VGEM		 Continuous
Transient		  
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C , Pulse width limited by TJM
TC = 25°C
12N100
10N100
12N100
10N100
12N100
10N100
10
9
48
40
12
10
A
A
A
A
A
A

EAR
TC = 25°C
  
30

mJ
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2		  
5
V/ns
PD TC = 25°C  
250
W

TJ
TJM
Tstg

    
-55 ... +150
             150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.063 in.) from case for 10 s  
300

°C

VISOL 50/60 Hz, RMS t = 1 min  
2500
V~
Weight    

5

g



Parameters:

Technical/Catalog InformationIXFR12N100Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C10A
Rds On (Max) @ Id, Vgs1.2 Ohm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 2900pF @ 25V
Power - Max250W
PackagingTube
Gate Charge (Qg) @ Vgs90nC @ 10V
Package / CaseISOPLUS247?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFR12N100Q
IXFR12N100Q



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Test Equipment
TOP853
TOP2005
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Cable Assemblies
CS1W-CN114
XW2Z-500T
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
View more