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IXFR14N100Q2

MOSFET 14 Amps 1000V

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SeekIC No. : 00158203 Detail

IXFR14N100Q2: MOSFET 14 Amps 1000V

IXFR14N100Q2 Data Sheet

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Part Number:
IXFR14N100Q2
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 9.5 A
Resistance Drain-Source RDS (on) : 1 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 9.5 A
Drain-Source Breakdown Voltage : 1000 V
Package / Case : ISOPLUS 247
Resistance Drain-Source RDS (on) : 1 Ohms


Parameters:

Technical/Catalog InformationIXFR14N100Q2
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C9.5A
Rds On (Max) @ Id, Vgs900 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 2700pF @ 25V
Power - Max200W
PackagingTube
Gate Charge (Qg) @ Vgs83nC @ 10V
Package / CaseISOPLUS247?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFR14N100Q2
IXFR14N100Q2



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