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IXFR16N120P

MOSFET 16 Amps 1200V 1 Rds

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SeekIC No. : 00158397 Detail

IXFR16N120P: MOSFET 16 Amps 1200V 1 Rds

IXFR16N120P Data Sheet

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Part Number:
IXFR16N120P
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 1.04 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 9 A
Drain-Source Breakdown Voltage : 1200 V
Package / Case : ISOPLUS 247
Resistance Drain-Source RDS (on) : 1.04 Ohms


Parameters:

Technical/Catalog InformationIXFR16N120P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C9A
Rds On (Max) @ Id, Vgs1.04 Ohm @ 8A, 10V
Input Capacitance (Ciss) @ Vds 6900pF @ 25V
Power - Max230W
PackagingTube
Gate Charge (Qg) @ Vgs120nC @ 10V
Package / CaseISOPLUS247?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFR16N120P
IXFR16N120P



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