IXFR180N06

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.005 Ohms
Continuous Drain Current : 180 A
Package / Case : ISOPLUS 247


Description

The IXFR180N06 is n-channel enhancement mode avalanche rated,high dv/dt,low trr.

Features of the IXFR180N06 are:(1)silicon chip on direct-copper-bond substrate:high power dissipation;isolated mounting surface;2500Velectrical isolation; (2)low drain to tab capacitance(<30pF); (3)low Rdc(on) HDMOS TM process; (4)rugged polysilicon gate cell structure; (5)rated for unclamped inductive load switching(UIS); (6)fast intrinsic rectifier.

The absolute maximum ratings of the IXFR180N06 can be summarized as:(1)Vdss Tj=25~150:60V; (2)Vdgr Tj=25~150;Rgs=1M:60V; (3)Vgs continuous :±20V; (4)Vgsm transient:±30V; (5)Id25 Tc=25(MOSFET chip capability):180A; (6)ID(RMS) externallead(current limit):76A; (7)IDM Tc=25:720A; (8)IAR Tc=25:180A; (9)EAR Tc=25:60mj; (10)EAS Tc=25:3j; (11)dv/dt IsIDM,di/dt100A/S,VDDVDSS TJ150,RG=2; (12)Pd Tc=25 :560W; (13)Tj:-55~150; (14)Tjm:150; (15)Tstg:-55~150; (16)TL 1.6mm(0.063 in.)from case for 10 s:300; (17)Visol 50/60 Hz,RMS t=1min:2500V.If you want to know more information such as the electrical AC characteristics ,please download the datasheet in www.seekdatasheet.com .

Parameters:

Technical/Catalog Information	IXFR180N06
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	180A
Rds On (Max) @ Id, Vgs	5 mOhm @ 90A, 10V
Input Capacitance (Ciss) @ Vds	7650pF @ 25V
Power - Max	560W
Packaging	Tube
Gate Charge (Qg) @ Vgs	420nC @ 10V
Package / Case	ISOPLUS247?
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFR180N06 IXFR180N06