IXFR200N10P

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Package / Case : ISOPLUS 247
Resistance Drain-Source RDS (on) : 0.009 Ohms
Continuous Drain Current : 133 A
Packaging : Box


Features:

· Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
· Low drain to tab capacitance(<30pF)
· Fast recovery intrinsic diode

· Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
· Low drain to tab capacitance(<30pF)
· Fast recovery intrinsic diode

Application

·DC-DC converters
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·AC motor control

·DC-DC converters
·Battery chargers
·Switched-mode and resonant-mode power supplies
·DC choppers
·AC motor control

Specifications

Symbol	Test Conditions	Maximum	Ratings
VDSS VDGR	TJ = 25 to 175 TJ = 25 to 175; RGS = 1 MΩ	100 100	V V
VGS VGSM		±20 ±30	V V
ID25 ID(RMS) IDM	TC = 25 External lead current limit TC = 25, pulse width limited by TJM	133 75 400	A A A
IAR EAR EAS	TC = 25 TC = 25 TC = 25	60 100 4	A mJ J
dv/dt	IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150, RG = 4 Ω	10	V/ns
PD	TC = 25	350	W
TJ TJM Tstg		-55 ... +175 175 -55 ... +150
VISOL	50/60 Hz, RMS, 1 minute	2500	V~
FC	Mounting Force	20..120/4.6..20	Nm/lb
Weight		5	g

Symbol	Test Conditions	Maximum	Ratings
VDSS VDGR	TJ = 25 to 175 TJ = 25 to 175; RGS = 1 MΩ	100 100	V V
VGS VGSM		±20 ±30	V V
ID25 ID(RMS) IDM	TC = 25 External lead current limit TC = 25, pulse width limited by TJM	133 75 400	A A A
IAR EAR EAS	TC = 25 TC = 25 TC = 25	60 100 4	A mJ J
dv/dt	IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150, RG = 4 Ω	10	V/ns
PD	TC = 25	350	W
TJ TJM Tstg		-55 ... +175 175 -55 ... +150
VISOL	50/60 Hz, RMS, 1 minute	2500	V~
FC	Mounting Force	20..120/4.6..20	Nm/lb
Weight		5	g

Symbol	Test Conditions	Maximum	Ratings
VDSS VDGR	TJ = 25 to 175 TJ = 25 to 175; RGS = 1 MΩ	100 100	V V
VGS VGSM		±20 ±30	V V
ID25 ID(RMS) IDM	TC = 25 External lead current limit TC = 25, pulse width limited by TJM	133 75 400	A A A
IAR EAR EAS	TC = 25 TC = 25 TC = 25	60 100 4	A mJ J
dv/dt	IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150, RG = 4 Ω	10	V/ns
PD	TC = 25	350	W
TJ TJM Tstg		-55 ... +175 175 -55 ... +150
VISOL	50/60 Hz, RMS, 1 minute	2500	V~
FC	Mounting Force	20..120/4.6..20	Nm/lb
Weight		5	g

Parameters:

Technical/Catalog Information	IXFR200N10P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	133A
Rds On (Max) @ Id, Vgs	9 mOhm @ 100A, 10V
Input Capacitance (Ciss) @ Vds	7600pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	235nC @ 10V
Package / Case	ISOPLUS247?
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFR200N10P IXFR200N10P