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IXFR21N100Q

MOSFET 18 Amps 1000V 0.5 Rds

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SeekIC No. : 00158246 Detail

IXFR21N100Q: MOSFET 18 Amps 1000V 0.5 Rds

IXFR21N100Q Data Sheet

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Part Number:
IXFR21N100Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 18 A
Resistance Drain-Source RDS (on) : 0.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 18 A
Drain-Source Breakdown Voltage : 1000 V
Package / Case : ISOPLUS 247
Resistance Drain-Source RDS (on) : 0.5 Ohms


Features:

• Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• Low drain to tab capacitance(<30pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Rated for Unclamped Inductive Load Switching (UIS)
• Fast intrinsic Rectifier


Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25 to 150
TJ = 25 to 150; RGS = 1 M		 1000
1000		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30		 V
V
ID25
ID(RMS)
IDM
IAR		 TC = 25 (MOSFET chip capability)
External lead (current limit)
TC = 25, Note 1
TC = 25		 19
84
21
21		 A
A
A
A
EAR
EAS		 TC = 25
TC = 25		 60
2.3		 mJ
J
dv/dt ISIDM, di/dt100 A/s, VDDVDSS
TJ150, RG = 2		 5
 V/ns
PD TC = 25 400 W
TJ
TJM
Tstg
TL		 1.6 mm (0.063 in.) from case for 10 s -55 ... +150
150
-55 ... +150
300


VISOL 50/60 Hz, RMS t = 1 min 2500 V~
Weight   5 g



Parameters:

Technical/Catalog InformationIXFR21N100Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C18A
Rds On (Max) @ Id, Vgs500 mOhm @ 10.5A, 10V
Input Capacitance (Ciss) @ Vds 5900pF @ 25V
Power - Max350W
PackagingTube
Gate Charge (Qg) @ Vgs170nC @ 10V
Package / CaseISOPLUS247?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFR21N100Q
IXFR21N100Q



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