Position: Home  > All Categories> Integrated Circuits (ICs) > IXFR24N50Q

IXFR24N50Q

MOSFET 22 Amps 500V 0.23 Rds

product image

IXFR24N50Q Picture
See larger image
SeekIC No. : 00154283 Detail

IXFR24N50Q: MOSFET 22 Amps 500V 0.23 Rds

IXFR24N50Q Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IXFR24N50Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/29

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 22 A
Resistance Drain-Source RDS (on) : 0.23 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 22 A
Package / Case : ISOPLUS 247
Resistance Drain-Source RDS (on) : 0.23 Ohms


Features:

 Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
 Low drain to tab capacitance(<35pF)
 Low RDS (on) HDMOSTM process
 Rugged polysilicon gate cell structure
 Unclamped Inductive Switching (UIS) rated
 Fast intrinsic Rectifier


Application

 DC-DC converters
 Battery chargers
 Switched-mode and resonant-mode power supplies
 DC choppers
 AC motor control


Specifications

Symbol Test Conditions
Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
500
500
V
V
VGS
VGEM		 Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, Pulse width limited by TJM
TC = 25°C

26N50Q
24N50Q
26N50Q
24N50Q
26N50Q
24N50Q
24
22
104
96
26
24
A
A
A
A
A
A

EAR
EAS
TC = 25°C
TC = 25°C
30
1.5

mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
5
V/ns
PD TC = 25°C
250
W

TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.063 in.) from case for 10 s
300

°C

VISOL 50/60 Hz, RMS t = 1 minute leads-to-tab
2500
V~
Weight

5

g



Description

 


Parameters:

Technical/Catalog InformationIXFR24N50Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C22A
Rds On (Max) @ Id, Vgs230 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds 3900pF @ 25V
Power - Max250W
PackagingTube
Gate Charge (Qg) @ Vgs95nC @ 10V
Package / CaseISOPLUS247?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFR24N50Q
IXFR24N50Q



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Undefined Category
VI-B63-IU
X27 589
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Discrete Semiconductor Products
T508N12TOF
MUR20040
Line Protection, Backups
BX0023
A20B-1008-0550
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
View more