IXFR26N60Q

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.25 Ohms
Continuous Drain Current : 23 A
Package / Case : ISOPLUS 247


Features:

• Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
• IXYS advanced low Q_g process
• Low gate charge and capacitances - easier to drive - faster switching
• Low drain to tab capacitance(<30pF)
• Low R _{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Rated for Unclamped Inductive Load Switching (UIS)
• Fast intrinsic Rectifier

Application

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC & DC motor control


Specifications

Symbol	Test Conditions	Maximum Ratings
VDSS VDGR	TJ = 25 to 150 TJ = 25to 150; RGS = 1	600 600	V V
VGS VGSM	Continuous Transient	± 20 ± 30	V V
ID25 IDM IAR	TC = 25 TC = 25, Note 1 TC = 25	23 92 26	A A A
EAR EAS	TC = 25 TC = 25	45 1.5	mJ J
dv/dt	IS IDM, di/dt 100 A/s, VDD VDSS TJ 150, RG = 2	5	V/ns
PD	TC = 25	310	W
TJ TJM Tstg		-55 ... +150 150 -55 ... +150
TL	1.6 mm (0.063 in.) from case for 10 s	250
VISOL	50/60 Hz, RMS t = 1 min	2500	V~
Weight		5	g

Parameters:

Technical/Catalog Information	IXFR26N60Q
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	23A
Rds On (Max) @ Id, Vgs	250 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds	5100pF @ 25V
Power - Max	310W
Packaging	Tube
Gate Charge (Qg) @ Vgs	200nC @ 10V
Package / Case	ISOPLUS247?
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFR26N60Q IXFR26N60Q