MOSFET 38 Amps 800V 0.24 Rds
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Specifications VDSS TJ = 25°Cto 150°C1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M1000V VGS...
Specifications VDSS TJ = 25°Cto 150°C1000 V VDGR TJ = 25°C to 150°C; RGS = 1 M1000V VGS...
Features: • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 800 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 28 A | ||
Resistance Drain-Source RDS (on) : | 0.3 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | ISOPLUS 247 | Packaging : | Tube |
Symbol | Test Conditions |
Maximum Ratings | |
VDSS VDGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M |
800 800 |
V V |
VGS VGEM |
Continuous Transient |
±30 ±40 |
V V |
ID25 IDM IAR |
TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C |
28 150 38 |
A A A |
EAR EAS |
TC = 25°C TC = 25°C |
75 4.0 |
mJ J |
dv/dt | IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 |
20 |
V/ns |
PD | TC = 25°C |
416 |
W |
TJ |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
TL | 1.6 mm (0.063 in.) from case for 10 s |
300 |
°C |
VISOL | 50/60 Hz, RMS, t = 1 min ISOL = 1mA, t = 1 s |
2500 3000 |
V~ V~ |
Weight |
5 |
g |
Technical/Catalog Information | IXFR38N80Q2 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25° C | 28A |
Rds On (Max) @ Id, Vgs | 240 mOhm @ 19A, 10V |
Input Capacitance (Ciss) @ Vds | 8340pF @ 25V |
Power - Max | 416W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 190nC @ 10V |
Package / Case | ISOPLUS247? |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXFR38N80Q2 IXFR38N80Q2 |