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IXFR38N80Q2

MOSFET 38 Amps 800V 0.24 Rds

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SeekIC No. : 00158195 Detail

IXFR38N80Q2: MOSFET 38 Amps 800V 0.24 Rds

IXFR38N80Q2 Data Sheet

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Part Number:
IXFR38N80Q2
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 28 A
Resistance Drain-Source RDS (on) : 0.3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 28 A
Resistance Drain-Source RDS (on) : 0.3 Ohms
Drain-Source Breakdown Voltage : 800 V
Package / Case : ISOPLUS 247


Features:

 Double metal process for low gate resistance
 Silicon chip on DCB substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
 
Epoxy meet UL 94 V-0, flammability classification
 Avalanche energy and current rated
 Fast intrinsic Rectifier


Application

 Easy assembly
 Space savings
 High power density


Specifications

Symbol Test Conditions
Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
800
800
V
V
VGS
VGEM		 Continuous
Transient
±30
±40
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, Pulse width limited by TJM
TC = 25°C
28
150
38
A
A
A

EAR
EAS
TC = 25°C
TC = 25°C
75
4.0

mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
20
V/ns
PD TC = 25°C
416
W

TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.063 in.) from case for 10 s
300

°C

VISOL 50/60 Hz, RMS, t = 1 min
ISOL = 1mA, t = 1 s
2500
3000
V~
V~
Weight

5

g



Parameters:

Technical/Catalog InformationIXFR38N80Q2
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C28A
Rds On (Max) @ Id, Vgs240 mOhm @ 19A, 10V
Input Capacitance (Ciss) @ Vds 8340pF @ 25V
Power - Max416W
PackagingTube
Gate Charge (Qg) @ Vgs190nC @ 10V
Package / CaseISOPLUS247?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFR38N80Q2
IXFR38N80Q2



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