IXFR40N50Q2

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 29 A
Resistance Drain-Source RDS (on) : 0.17 Ohms
Package / Case : ISOPLUS 247


Features:

· Double metal process for low gate resistance
· International standard packages
· Epoxy meet UL 94 V-0, flammability classification
· Low R_{DS (on)}, low Q_g
· Avalanche energy and current rated
· Fast intrinsic rectifier

Application

· DC-DC converters
· Switched-mode and resonant-mode power supplies, >500kHz switching
· DC choppers
· Pulse generation
· Laser drivers

Specifications

Symbol	Test Conditions	Maximum	Ratings
VDSS VDGR	TJ = 25 to 150 TJ = 25 to 150; RGS = 1 M	500 500	V V
VGS VGSM	Continuous Transient	±30 ±40	V V
ID25 IDM IAR	TC = 25 TC = 25, pulse width limited by TJM TC = 25	29 160 40	A A A
EAR EAS	TC = 25 TC = 25	50 2.5	mJ J
dv/dt	IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150, RG = 2	20	V/ns
PD	TC = 25	320	W
TJ TJM Tstg		-55...+150 150 -55...+150
TL	1.6 mm (0.063 in) from case for 10 s	300
FC	Mounting force	22...130/5...30	N/lb.
Weight		5	g

Parameters:

Technical/Catalog Information	IXFR40N50Q2
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	29A
Rds On (Max) @ Id, Vgs	170 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	4200pF @ 25V
Power - Max	320W
Packaging	Tube
Gate Charge (Qg) @ Vgs	110nC @ 10V
Package / Case	ISOPLUS247?
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXFR40N50Q2 IXFR40N50Q2