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IXFR44N80P

MOSFET DIODE Id26 BVdass800

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SeekIC No. : 00158282 Detail

IXFR44N80P: MOSFET DIODE Id26 BVdass800

IXFR44N80P Data Sheet

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Part Number:
IXFR44N80P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 26 A
Resistance Drain-Source RDS (on) : 0.19 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.19 Ohms
Drain-Source Breakdown Voltage : 800 V
Package / Case : ISOPLUS 247
Continuous Drain Current : 26 A


Features:

· Silicon chip on Direct-Copper-Bond substrate
    - High power dissipation
    - Isolated mounting surface
    - 2500V electrical isolation
·  Low drain to tab capacitance(<30pF)
·  Low RDS (on) HDMOSTM process
·  Rugged polysilicon gate cell structure
·  Unclamped Inductive Switching (UIS) rated
·  Fast intrinsic Rectifier



Application

·  DC-DC converters
·  Battery chargers
·  Switched-mode and resonant-mode power supplies
·  DC choppers
·  AC motor control



Specifications

Symbol
Test Conditions
Maximum
Ratings
VCES
VCGR
 TJ = 25to 150
TJ = 25 to 150; RGE = 1 M?
800
800
V
V
VGES
VGEM
 Continuous
Transient
±30
±40
V
V
IC25
IDM
TC = 25
TC = 25, pulse width limited by TJM
25
100
A
A
IAR
EAR
EAS
TC = 25
TC = 25
TC = 25
25
80
3.4
A
mJ
J
dv/dt
I IDM, di/dt 100 A/s, V VDSS,
TJ 150, RG = 10
10
V/ns
PD
 TC = 25
300
W
TJ
TJM
Tstg
  
-55 ... +150
150
-55 ... +150


TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
300
260

VISOL
 50/60 Hz, RMS, 1 minute
2500
V~
FC
 Mounting force
20..120 /4.5..25
Nm/l
Weight
5
g




Parameters:

Technical/Catalog InformationIXFR44N80P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C25A
Rds On (Max) @ Id, Vgs200 mOhm @ 22A, 10V
Input Capacitance (Ciss) @ Vds 12000pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs200nC @ 10V
Package / CaseISOPLUS247?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFR44N80P
IXFR44N80P



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