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IXFR80N10Q

MOSFET 80 Amps 100V 0.018 Rds

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SeekIC No. : 00159129 Detail

IXFR80N10Q: MOSFET 80 Amps 100V 0.018 Rds

IXFR80N10Q Data Sheet

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Part Number:
IXFR80N10Q
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 76 A
Resistance Drain-Source RDS (on) : 0.015 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : ISOPLUS 247
Continuous Drain Current : 76 A
Resistance Drain-Source RDS (on) : 0.015 Ohms


Parameters:

Technical/Catalog InformationIXFR80N10Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C76A
Rds On (Max) @ Id, Vgs15 mOhm @ 76A, 10V
Input Capacitance (Ciss) @ Vds 4500pF @ 25V
Power - Max310W
PackagingTube
Gate Charge (Qg) @ Vgs180nC @ 10V
Package / CaseISOPLUS247?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFR80N10Q
IXFR80N10Q



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