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IXFR90N30

MOSFET 75 Amps 300V 0.033 Rds

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SeekIC No. : 00158486 Detail

IXFR90N30: MOSFET 75 Amps 300V 0.033 Rds

IXFR90N30 Data Sheet

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Part Number:
IXFR90N30
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 300 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.033 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : ISOPLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.033 Ohms
Package / Case : ISOPLUS 247
Drain-Source Breakdown Voltage : 300 V


Features:

 Silicon chip on Direct-Copper-Bond substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
 Low drain to tab capacitance(<30pF)
 Low RDS (on) HDMOSTM process
 Rugged polysilicon gate cell structure
 Unclamped Inductive Switching (UIS) rated
 Fast intrinsic Rectifier


Application

 DC-DC converters
 Battery chargers
 Switched-mode and resonant-mode power supplies
 DC choppers
 AC & DC motor control


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR 		TJ = 25 to 150
TJ = 25 to 150;RGS = 1 M
 300 V
300 V
VGS
VGSM 		Continuous
Transient		 ±20 V
±30 V
ID25
IDM
IAR 		TC = 25
TC = 25, Note 1
TC = 25

 75 A
360 A
90 A
EAR
EAS		 TC = 25
TC = 25

 64 mJ
3 J
dv/dt
 IS  IDM, di/dt 100 A/s, VDD VDSS
TJ 150, RG = 2		 5 V/ns
PD TC = 25 400 W
TJ
TJM
Tstg

-55 ... +150
            150
-55 ... +150
TL 1.6 mm (0.063 in.) from case for 10 s 300
VISOL 50/60 Hz, RMS        t = 1 min 2500 V~
Weight   5 g



Parameters:

Technical/Catalog InformationIXFR90N30
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs33 mOhm @ 45A, 10V
Input Capacitance (Ciss) @ Vds 10000pF @ 25V
Power - Max400W
PackagingTube
Gate Charge (Qg) @ Vgs360nC @ 10V
Package / CaseISOPLUS247?
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFR90N30
IXFR90N30



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