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IXFT12N100F

MOSFET

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SeekIC No. : 00164457 Detail

IXFT12N100F: MOSFET

IXFT12N100F Data Sheet

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Part Number:
IXFT12N100F
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 1.05 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-268 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 1.05 Ohms
Drain-Source Breakdown Voltage : 1000 V
Package / Case : TO-268


Features:

·RF capable MOSFETs
·Double metal process for low gate resistance
·Rugged polysilicon gate cell structure
·Unclamped Inductive Switching (UIS) rated
·Low package inductance
   - easy to drive and to protect
·Fast intrinsic rectifier


Application

·DC-DC converters
·Switched-mode and resonant-mode power supplies, >500kHz switching
·DC choppers
·13.5 MHz industrial applications
·Pulse generation
·Laser drivers
·RF amplifiers


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ		 1000
1000		 V
V
VGS
VGSM		 Continuous
Transient		 ±20
±30		 V
V
ID25
IDM
IAR		 TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C		 12
48
12		 A
A
A
EAR
EAS		 TC = 25°C
TC= 25°C		 30
1.0		 mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS
TJ 150°C, RG = 2 Ω		 5 V/ns
PD TC = 25°C 300 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.063 in.) from case for 10 s 300 °C
Md Mounting torque TO-247 1.13/10 Nm/lb.in.
Weight TO-247
TO-268		 6
4		 g
g



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