IXFT 28N50F Selling Leads, Price trend, IXFT 28N50F DataSheet download, circuit diagram from SeekIC.com

Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive Switching (UIS) rated· Low package inductance - easy to drive and to protect· Fast intrinsic rectifierApplication· DC-DC converters· Switched-mode and resonant-mode power supplies, >500kHz switchin...

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SeekIC No. : 004381565 Detail

IXFT 28N50F: Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive Switching (UIS) rated· Low package inductance - easy to drive and to protect· Fast intrinsic rectifi...

IXFT 28N50F Data Sheet

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Part Number:: IXFT 28N50F
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Upload time: 2024/4/29

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Product Details

Description

Features:

· RF capable MOSFETs
· Double metal process for low gate resistance
· Unclamped Inductive Switching (UIS) rated
· Low package inductance - easy to drive and to protect
· Fast intrinsic rectifier

Application

· DC-DC converters
· Switched-mode and resonant-mode power supplies, >500kHz switching
· DC choppers
· 13.5 MHz industrial applications
· Pulse generation
· Laser drivers
· RF amplifiers

Specifications

Symbol	Test conditions	Maximum	ratings
V_DSS V_DGR	TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M	500 500	V V
V_GS V_GSM	Continuous Transient	±20 ±30	V V
I_D25 I_DM I_AR	TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C	28 112 28	A A A
E_AR E_AS	TC = 25°C TC = 25°C	35 1.5	mJ J
dv/dt	IS IDM, di/dt 100 A/s, VDD VDSS TJ 150°C, RG = 2	10	V/ns
P_D	TC = 25°C	315	W
T_J T_JM T_stg		-55 ... +150 150 -55 ... +150	°C °C °C
T_L	1.6 mm (0.063 in.) from case for 10 s	300	°C
M_d	Mounting torque TO-247	1.13/10	Nm/lb.in.
Weight	TO-247 TO-268	6 4	g g

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IXFT 28N50F

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