MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
IXFT18N90P: MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
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Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 900 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 18 A | ||
| Resistance Drain-Source RDS (on) : | 600 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-268 | Packaging : | Tube |