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IXFT20N80Q

MOSFET 20 Amps 800V 0.42 Rds

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SeekIC No. : 00158317 Detail

IXFT20N80Q: MOSFET 20 Amps 800V 0.42 Rds

IXFT20N80Q Data Sheet

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Part Number:
IXFT20N80Q
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/19

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.42 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-268 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.42 Ohms
Continuous Drain Current : 20 A
Drain-Source Breakdown Voltage : 800 V
Package / Case : TO-268


Features:

• IXYS advanced low Qg process
• International standard packages
• Epoxy meet UL 94 V-0, flammability classification
• Low RDS (on) low Qg
• Avalanche energy and current rated
• Fast intrinsic rectifier


Application

• Easy to mount
• Space savings
• High power density


Parameters:

Technical/Catalog InformationIXFT20N80Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs420 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 5100pF @ 25V
Power - Max360W
PackagingTube
Gate Charge (Qg) @ Vgs200nC @ 10V
Package / CaseTO-268
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFT20N80Q
IXFT20N80Q



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