MOSFET 600V 26A
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Features: · RF capable MOSFETs· Double metal process for low gate resistance· Unclamped Inductive ...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 26 A | ||
| Resistance Drain-Source RDS (on) : | 0.27 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-268 | Packaging : | Tube |
| VDSS | TJ = 25 to 150 | 600 | V |
| VDGR | TJ = 25 to 150; RGS = 1 M | 600 | V |
| VGSS | Continuous | ±30 | V |
| VGSM | Transient | ±40 | V |
| ID25 | TC = 25 | 26 | A |
| IDM | TC = 25, pulse width limited by TJM | 65 | A |
| IAR | TC = 25 | 26 | A |
| EAR | TC = 25 | 40 | mJ |
| EAS | TC = 25 | 1.2 | J |
| dv/dt | IS IDM, di/dt 100 A/s, VDD VDSS TJ 150, RG = 5 |
10 | V/ns |
| PD | TC = 25 | 460 | W |
| TJ | -55 ... +150 | ||
| TJM | 150 | ||
| Tstg | -55 ... +150 | ||
| TL | 1.6 mm (0.062 in.) from case for 10 s Plastic body |
300 250 |
|
| Md | Mounting torque (TO-3P&TO-247) | 1.13/10 Nm/lb.in. | |
| FC | Mounting force (PLUS220) | 11..65/2.5..15 | N/lb |
| Weight | TO-3P TO-248 TO-268 PLUS220 & PLUS220SMD |
5.5 6.0 5.0 4.0 |
g g g g |
| Technical/Catalog Information | IXFT26N60P |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 26A |
| Rds On (Max) @ Id, Vgs | 270 mOhm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 4150pF @ 25V |
| Power - Max | 460W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 72nC @ 10V |
| Package / Case | TO-268 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXFT26N60P IXFT26N60P |