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IXFT60N20F

MOSFET

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SeekIC No. : 00164453 Detail

IXFT60N20F: MOSFET

IXFT60N20F Data Sheet

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Part Number:
IXFT60N20F
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.038 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-268 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 60 A
Package / Case : TO-268
Resistance Drain-Source RDS (on) : 0.038 Ohms


Features:

· RF capable MOSFETs
· Double metal process for low gate resistance
· Unclamped Inductive Switching (UIS) rated
· Low package inductance
- easy to drive and to protect
· Fast intrinsic rectifier


Application

· DC-DC converters
· Switched-mode and resonant-mode power supplies, >500kHz switching
· DC choppers
· 13.5 MHz industrial applications
· Pulse generation
· Laser drivers
· RF amplifiers


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