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IXFT60N25Q

MOSFET 60 Amps 250V 0.047 Rds

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SeekIC No. : 00154168 Detail

IXFT60N25Q: MOSFET 60 Amps 250V 0.047 Rds

IXFT60N25Q Data Sheet

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Part Number:
IXFT60N25Q
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.047 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-268 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Continuous Drain Current : 60 A
Package / Case : TO-268
Resistance Drain-Source RDS (on) : 0.047 Ohms


Features:

• Low gate charge
• International standard packages
• EpoxymeetUL94V-0, flammability classification
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Avalanche energy and current rated
• Fast intrinsic Rectifier


Parameters:

Technical/Catalog InformationIXFT60N25Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs47 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 5100pF @ 25V
Power - Max360W
PackagingTube
Gate Charge (Qg) @ Vgs180nC @ 10V
Package / CaseTO-268
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFT60N25Q
IXFT60N25Q



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