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IXFT66N20Q

MOSFET 66 Amps 200V

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SeekIC No. : 00154541 Detail

IXFT66N20Q: MOSFET 66 Amps 200V

IXFT66N20Q Data Sheet

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Part Number:
IXFT66N20Q
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/6

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 66 A
Resistance Drain-Source RDS (on) : 0.04 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-268 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-268
Continuous Drain Current : 66 A
Resistance Drain-Source RDS (on) : 0.04 Ohms


Features:

􀁺· IXYS advanced low Qg process
􀁺· International standard packages
􀁺· Low gate charge and capacitance
- easier to drive
- faster switching
􀁺· Low RDS (on)
􀁺· Unclamped Inductive Switching (UIS) rated
􀁺· Molding epoxies meet UL 94 V-0 flammability classification




Parameters:

Technical/Catalog InformationIXFT66N20Q
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C66A
Rds On (Max) @ Id, Vgs40 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 3700pF @ 25V
Power - Max400W
PackagingTube
Gate Charge (Qg) @ Vgs105nC @ 10V
Package / CaseTO-268
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFT66N20Q
IXFT66N20Q



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