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IXFT96N20P

MOSFET 96 Amps 200V 0.024 Rds

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SeekIC No. : 00153860 Detail

IXFT96N20P: MOSFET 96 Amps 200V 0.024 Rds

IXFT96N20P Data Sheet

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Part Number:
IXFT96N20P
Mfg:
Ixys
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 96 A
Resistance Drain-Source RDS (on) : 0.024 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-268 Packaging : Box    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 96 A
Resistance Drain-Source RDS (on) : 0.024 Ohms
Package / Case : TO-268
Packaging : Box


Parameters:

Technical/Catalog InformationIXFT96N20P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C96A
Rds On (Max) @ Id, Vgs24 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4800pF @ 25V
Power - Max600W
PackagingTube
Gate Charge (Qg) @ Vgs145nC @ 10V
Package / CaseTO-268
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFT96N20P
IXFT96N20P



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