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IXFX55N50

MOSFET 500V 55A

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SeekIC No. : 00158424 Detail

IXFX55N50: MOSFET 500V 55A

IXFX55N50 Data Sheet

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Part Number:
IXFX55N50
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 55 A
Resistance Drain-Source RDS (on) : 0.08 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : PLUS 247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Resistance Drain-Source RDS (on) : 0.08 Ohms
Package / Case : PLUS 247
Continuous Drain Current : 55 A


Features:

 International standard package
 Low RDS (on) HDMOSTM process
 Rugged polysilicon gate cell structure
 Unclamped Inductive Switching (UIS) rated
 Low package inductance
   - easy to drive and to protect
 Fast intrinsic rectifier


Application

 DC-DC converters
 Battery chargers
 Switched-mode and resonant-mode power supplies
 DC choppers
 AC motor control
 Temperature and lighting controls


Specifications

Symbol Test Conditions
Maximum Ratings
VDSS
VDGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS= 1 M		  
500
500
V
V
VGS
VGSM		 Continuous
Transient		  
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
50N50
55N50
50N50
55N50
50N50
55N50
50
55
200
220
50
55
A
A
A
A
A
A

EAR
EAS
TC = 25°C
TC = 25°C
  
60
3

mJ
J
dv/dt IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2		  
5
V/ns
PD TC = 25°C  
520
W

TJ
TJM
Tstg

  
-55 ... +150
             150
-55 ... +150
°C
°C
°C
TL 1.6 mm (0.063 in.) from case for 10 s  
300

°C

Md
Mounting torque
 
1.13/10
Nm/lb.in.
Weight
 
6
g



Parameters:

Technical/Catalog InformationIXFX55N50
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C55A
Rds On (Max) @ Id, Vgs80 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 9400pF @ 25V
Power - Max520W
PackagingTube
Gate Charge (Qg) @ Vgs330nC @ 10V
Package / CasePLUS 247
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXFX55N50
IXFX55N50



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