IXGH20N120 Selling Leads, Price trend , Ixys, IXGH20N120 DataSheet download, circuit diagram from SeekIC.com

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IXGH20N120: IGBT Transistors 40 Amps 1200V 3 V Rds

IXGH20N120 Data Sheet

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Part Number:: IXGH20N120
Mfg:: Ixys
Supply Ability:: 5000

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1~5000

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Upload time: 2024/4/27

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Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	1200 V
Maximum Gate Emitter Voltage :	20 V	Maximum Operating Temperature :	+ 150 C
Package / Case :	TO-247-3	Packaging :	Tube

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Gate Emitter Voltage : 20 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-247-3

Features:

•International standard packages
JEDEC TO-247 and TO-268
•High current handling capability
•MOS Gate turn-on
- drive simplicity

Application

•AC motor speed control
•DC servo and robot drives
•DC choppers
•Uninterruptible power supplies (UPS)
•Switch-mode and resonant-mode power supplies
•Capacitor discharge

Parameters:

Technical/Catalog Information	IXGH20N120
Vendor	IXYS
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	1200V
Current - Collector (Ic) (Max)	40A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 20A
Power - Max	150W
Mounting Type	Through Hole
Package / Case	TO-247
Packaging	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXGH20N120 IXGH20N120

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IXGH20N120

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