IGBT Transistors 60 Amps 600V 2.3 Rds
IXGH32N60B: IGBT Transistors 60 Amps 600V 2.3 Rds
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Features: l International standard packageJEDEC TO-247 AD2 IGBT and anti-parallel FRED in onepacka...
Features: l International standard packageJEDEC TO-247 AD2 IGBT and anti-parallel FRED in onepacka...
Features: • International standard packages: JEDEC TO-247AD & TO-268• IGBT and ant...
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
| Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-247AD-3 | Packaging : | Tube |
|
Symbol |
Test Conditions |
Maximum |
Ratings |
|
VCES VCGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M |
600 600 |
V V |
|
VGES VGEM |
Continuous Transient |
±20 ±30 |
V V |
|
IC25 IC90 ICM |
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C |
60 32 120 |
A A A |
|
SSOA (RBSOA) |
VGE= 15 V, TVJ = 125°C, RG = 33 W Clamped inductive load, L = 100 H |
ICM = 64 @ 0.8 VCES |
A |
|
PC |
TC = 25°C |
200 |
W |
|
TJ TJM Tstg |
-55 ... +150 150 Tstg -55 ... +150 |
°C °C °C | |
|
Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 |
°C | |
|
Md |
Mounting torque |
1.13/10 |
Nm/lb.in. |
|
Weight |
TO-247 AD |
6 |
g |
| Technical/Catalog Information | IXGH32N60B |
| Vendor | IXYS |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 60A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 32A |
| Power - Max | 200W |
| Mounting Type | Through Hole |
| Package / Case | TO-247AD |
| Packaging | Bulk |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IXGH32N60B IXGH32N60B |