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IXGK50N60BU1

IGBT Transistors 75 Amps 600V 2.3 Rds

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SeekIC No. : 00143620 Detail

IXGK50N60BU1: IGBT Transistors 75 Amps 600V 2.3 Rds

IXGK50N60BU1 Data Sheet

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Part Number:
IXGK50N60BU1
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-264AA-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-264AA-3


Features:

· International standard package JEDEC TO-264 AA
· High frequency IGBT and antiparallel FRED in one package
· 2nd generation HDMOSTM process
· Low VCE(sat)
    - for minimum on-state conduction losses
· MOS Gate turn-on
    - drive simplicity
· Fast Recovery Epitaxial Diode (FRED)
    - soft recovery with low IRM


Application

· AC motor speed control
· DC servo and robot drives
· DC choppers
· Uninterruptible power supplies (UPS)
· Switch-mode and resonant-mode power supplies


Parameters:

Technical/Catalog InformationIXGK50N60BU1
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 50A
Power - Max300W
Mounting TypeThrough Hole
Package / CaseTO-264AA
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGK50N60BU1
IXGK50N60BU1



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