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IXGP12N60B

IGBT Transistors 24 Amps 600V 2.1 Rds

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SeekIC No. : 00143570 Detail

IXGP12N60B: IGBT Transistors 24 Amps 600V 2.1 Rds

IXGP12N60B Data Sheet

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Part Number:
IXGP12N60B
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-220AB-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Package / Case : TO-220AB-3


Features:

· Moderate frequency IGBT and antiparallel FRED in one package
· New generation HDMOSTM process
· International standard package JEDEC TO-220AB and TO-263AA
· High peak current handling capability


Application

· PFC circuit
· AC motor speed control
· DC servo and robot drives
· Switch-mode and resonant-mode power supplies


Parameters:

Technical/Catalog InformationIXGP12N60B
VendorIXYS
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)24A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 12A
Power - Max100W
Mounting TypeThrough Hole
Package / CaseTO-220AB
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXGP12N60B
IXGP12N60B



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